Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription: 2170MHz, 23W Avg., 28V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET2751 -
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Category: transistorDescription: RF Power Transistor,960 to 1500MHz, 250W, Typ Gain in dB is 22.7 @ 1300MHz, 50V, LDMOS, SOT17931299 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) HV5 32W N/CDMA6662 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) HV6 2.3GHZ 40W4738 -
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Category: transistorDescription: RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24.6 @ 230MHz, 50V, LDMOS, SOT17875883 -
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Category: transistorDescription: RF Power Transistor,720 to 960MHz, 200W, Typ Gain in dB is 19.5 @ 920MHz, 48V, LDMOS, SOT18181781 -
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Category: transistorDescription: Bipolar Transistor - Bipolar Junction Transistor (BJT) 200mA 40V Quad6687 -
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Category: transistorDescription: ON Semiconductor MMBF4091 NChannel JFET transistor, Vds=0.2 V, Idss: Min. 30mA, 3-pin SOT-23 package5741 -
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Category: transistorDescription: RF Power Transistor,2300 to 2400MHz, 275W, Typ Gain in dB is 14.9 @ 2300MHz, 28V, LDMOS, SOT18009172 -
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Category: transistorDescription: RF Power Transistor,2496 to 2690MHz, 209W, Typ Gain in dB is 14.5 @ 2496MHz, 28V, LDMOS, SOT18004136 -
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Category: transistorDescription: Dual field-effect transistor, MOSFET, N and P channels, 4 A, 30 V, 0.05 ohm, 10 V, 3 V8919 -
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Category: transistorDescription: 高线性度的硅锗双极RF晶体管 High Linearity Silicon Germanium Bipolar RF Transistor1089 -
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Category: transistorDescription: RN1406 带阻NPN三极管 50V 100mA/0.1A 4.7k 47k SOT-23/SC-59/S-Mini marking/标记 XF 开关 逆变电路 接口电路和驱动器电路应用3661
